X-Ray-Induced Photoconductivity in Dielectric Films
نویسندگان
چکیده
منابع مشابه
X-ray induced persistent photoconductivity in Si-doped Al0.35Ga0.65As
We demonstrate that x-ray irradiation can be used to induce an insulator–metal transition in Si-doped Al0.35Ga0.65As, a semiconductor with DX centers. The excitation mechanism of the DX centers into their shallow donor state was revealed by studying the photoconductance along with fluorescence. The photoconductance as a function of incident x-ray energy exhibits an edge both at the Ga and As K ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 1972
ISSN: 0018-9499
DOI: 10.1109/tns.1972.4326804